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| SMD Type PNP General Purpose Amplifier BSS63 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm +0.1 2.4-0.1 PNP general purpose amplifier 1 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 Features 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Junction temperature Storage temperature Total device dissipation Derate above 25 Thermal resistance, junction to ambient Symbol VCE0 VCBO VEBO IC Tj Tstg PD ReJA Rating 100 110 6 200 150 -55 to +150 350 2.8 357 mW mW/ /W Unit V V V mA Electrical Characteristics Ta = 25 Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-cutoff current Emitter-base cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Current gain - bandwidth product Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Testconditons IC = 100 iA, IB = 0 IC = 10 iA, IE = 0 IE = 1.0 iA, IC = 0 VCB = 90 V, IE = 0 VCB = 90 V, IE = 0, TA = 150 VEB = 6.0 V, IC = 0 IC = 10 mA, VCE = 1.0 V IC = 25 mA, VCE = 1.0 V IC = 25 mA, IB = 2.5 mA IC = 25 mA, IB = 2.5 mA IC = 25 mA, VCE = 5.0,f = 35 MHz 50 30 30 0.25 0.9 V V MHz Min 100 110 6 100 50 200 Typ Max Unit V V V nA iA nA Marking Marking T3 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 |
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